Modelling and characterization of InP-based high-speed pin-photodiode
نویسندگان
چکیده
In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 μm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter.
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